Cheaper Silicon Found Effective for Solar Cells
A research team from the University of California at Berkeley,
Lawrence Berkeley National Laboratory, Argonne National Laboratory, and
Pacific Northwest National Laboratory, using U.S. Department of Energy
(DOE) synchrotron light sources, has successfully shown that inexpensive
silicon has the potential to be used for photovoltaic (PV) devices,
commonly known as solar cells. In a new approach—whose findings were
published online in Nature Materials (August 14, 2005)—the
researchers used nanodefect engineering to control transition metal
contamination in order to produce impurity-rich, performance-enhanced
multicrystalline silicon (mc-Si) material.
"Solar energy is often touted as the most promising and secure energy
source, capable of reducing our dependence on foreign fuels while
reducing the emission of dangerous gases that change world climate. Even
though the current, worldwide growth rate of PV of over 25 percent per
year is nothing short of amazing, photovoltaics could grow much faster
if researchers and manufacturers could further reduce the cost of solar
cells and overcome the shortage in the high-quality, semiconductor-grade
silicon used presently to make commercial solar cells." said Eicke Weber
(UCB), the project's principal investigator.
To that end, Tonio Buonassisi, Andrei Istratov, and Eicke Weber, of
the University of California, Berkeley, teamed up with scientists from
three DOE national laboratories: Barry Lai and Zhonghou Cai, of the
Advanced Photon Source at Argonne National Laboratory; Steven Heald, of
Pacific Northwest National Laboratory; and Matthew Marcus, of the
Advanced Light Source at Lawrence Berkeley National Laboratory. The team
studied transition metals, native contaminants to less purified silicon,
and their effect on solar cell material performance using highly
sensitive, state-of-the-art synchrotron-based analytical techniques.
The researchers’ work at finding a way to supplement the currently
used high-quality silicon feedstock with what they describe as "cheaper
but dirtier alternative feedstock materials" was spurred on by the high
cost of polysilicon (polycrystalline silicon). Currently, polysilicon is
purified in a complex refining procedure and, thus, only a limited
amount (about 30,000 tons) is produced each year. At the same time, the
photovoltaic industry, a major user of polysilicon, has steadily
increased its utilization of the material over the past few years. In
fact, 2004 became the first year that the available supply for silicon
feedstock did not meet its demand.
Many experimenters in the past have attempted to use lower quality,
abundantly available solar-grade silicon (SoG-Si) feedstock to produce
cost-effective solar cells. However, the traditional solar cell
processing steps designed to reduce the detrimental impact of metal
contamination on material performance, phosphorus diffusion
gettering and hydrogen passivation, were limited in their
capacity to improve material containing very high amounts of metal
impurities. A new approach was necessary.
In this work, it was discovered that the size and spacing of metal
nanodefect clusters controls the diffusion lengths of minority carriers,
a key component in establishing performance quality in solar-cell
devices. To understand this relationship between minority-carrier
diffusion length and metal impurities, the researchers turned to the
2-ID-D and 20-ID-B beamlines at the Advanced Photon Source and the
10.3.2 beamline at the Advanced Light Source.
Using recent advances in synchrotron-based X-ray fluorescence
microscopy, X-ray absorption microspectroscopy, and spectrally resolved
X-ray-beam-induced current, the researchers were able to (1) map the
distribution of metal impurity nanoprecipitates with sub-micron spatial
resolution, (2) analyze the chemical state of metal impurity clusters,
and (3) map the minority-carrier diffusion length in situ. Tonio
Buonassisi and Andrei Istratov (UCB/LBNL) explain: "It was only with
this suite of highly-sensitive synchrotron X-ray microprobe techniques
capable of detecting metal clusters as small as 30 nanometers that we
could determine the chemical state of metal impurities, their spatial
distributions, and their impact on solar cell performance. We have, in
essence, directly observed the impact of nanometer-sized defects on
centimeter-sized devices." Coauthor Barry Lai ( ANL/APS) adds: "The
identification of the types of defect present in mc-Si is crucial in
determining their impacts on device performance and hence the
development of proper remediation strategies."
Within the paper, the researchers suggested that rather than removing
all metal defects from silicon feedstock, which is expensive and
time-consuming, large amounts of metals inside the feedstock could
remain as long as their individual sizes and distances apart from one
another are restricted by the application of nanodefect engineering.
They found that "to maximize solar-cell efficiency without changing the
total metal concentration, all metals must be completely contained in
large, micrometer-sized clusters separated by several hundreds of
micrometers, thus minimizing the interaction between metal atoms and
charge-carrying electrons."
The researchers demonstrated that one possible means to achieve a
more beneficial distribution of metals is by tailoring the cooling rate
after high-temperature processing. It was demonstrated that even in
heavily contaminated mc-Si the minority-carrier diffusion length could
be raised by a factor of four. Such an improvement indicates that the
use of lower-quality silicon feedstocks with strict contamination
engineering may be an economical alternative in manufacturing low-cost
commercial solar cells.
William Arthur Atkins
The work is supported by the U.S. Department of Energy's (DOE)
National Renewable Energy Laboratory (NREL) and its University
Crystalline Silicon Research Project. Richard Matson, the project's
manager, stated that, "The group's contribution to the research and
development of silicon solar cells is seminal and their synchrotron
based X-ray characterization technique is both quite powerful and unique
in the field."
See: Tonio Buonassisi, Andrei A. Istratov, Matthew
A. Marcus, Barry Lai, Zhonghou Cai, Steven M. Heald, and Eicke R. Weber.
"Engineering metal-impurity
nanodefects for low-cost solar cells," Nature Materials,
online August 14, 2005. |